High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment
- 1 March 1991
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 138-149
- https://doi.org/10.1117/12.24289
Abstract
The room teffiperature stiniulated emission near ultraviolet from ntype GaN film which was grown by MOVPE on a sapphire substrate is observed for the first time. The low energy electron beam irradiation treatment lowers the resistivity of Mgdoped GaN which tends to show p-type conduction and simultaneously enhances blue luminescence efficiency drastically. The pn junction LED shows strong both nearbandedge UV ends sion from nlayer and blue emission from player.Keywords
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