Metastable-atom-activated growth of an ultrathin carbonaceous resist for reactive ion etching of SiO2 and Si3N4
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1155-1160
- https://doi.org/10.1116/1.590026
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Nanostructure fabrication in silicon using cesium to pattern a self-assembled monolayerApplied Physics Letters, 1997
- Writing nanostructures with a metastable helium beamMicroelectronic Engineering, 1997
- Nanometerscale lithography with chromium atoms using light forcesMicroelectronic Engineering, 1997
- A virtual amplitude grating for atomic opticsOptics Communications, 1997
- High-resolution silicon patterning with self-assembled monolayer resistsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Light force cooling, focusing, and nanometer-scale deposition of aluminum atomsOptics Letters, 1995
- Deexcitation of helium 2S, 2S, and 2Patoms at Ar and Xe filmsPhysical Review A, 1994
- Atom opticsPhysics Reports, 1994
- Investigation of intermediate steps in the self-assembly of n-alkanethiols on gold surfaces by soft x-ray spectroscopyLangmuir, 1993
- Near-surface residue formation in CF4/H2 reactive ion etching of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992