A method to determine minority carrier lifetime in GaAs light-emitting diodes
- 31 March 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (3) , 257-260
- https://doi.org/10.1016/0038-1101(79)90030-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Measurement of minority carrier lifetime profiles in siliconSolid-State Electronics, 1977
- Lifetime measurements in silicon epitaxial materialsSolid-State Electronics, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructuresJournal of Applied Physics, 1974
- Radiative lifetime in GaAs1−xPx p-n junctionsApplied Physics Letters, 1973
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964