Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9A) , L717-719
- https://doi.org/10.1143/jjap.24.l717
Abstract
Optoelectrical properties of heterojunctions consisting of hydrogenated amorphous silicon (a-Si:H) and polycrystalline cadmium telluride (pc-CdTe) have been investigated in current-voltage characteristics and spectral photoresponses. It was found that the a-Si:H/pc-CdTe heterojunctions had depletion layers on both sides of a-Si:H and pc-CdTe and provided a high and flat photosensitivity over the wavelength range from 400 to 850 nm. These results hold promise for application to a highly efficient solar cell and a photo-sensor.Keywords
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