Scaling of Si and GaAs trench etch rates with aspect ratio, feature width, and substrate temperature
- 1 January 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (1) , 92-104
- https://doi.org/10.1116/1.587992
Abstract
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