Impact ionization avalanche breakdown in short crystal regions of p-Ge

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Abstract
The low‐temperature impact ionization avalanche breakdown in p‐Ge is investigated on a series of samples with various lengths of the electrically active region located between the ohmic contacts. We have studied the breakdown behavior as a function of the contact distance together with the response to an applied magnetic field. A simple model considering the specific hot‐carrier situation in the prebreakdown regime can explain the experimental results.