Anti-Stokes' light converter based on graded-band-gap semiconductors
- 31 December 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (12) , 1159-1163
- https://doi.org/10.1016/0038-1101(67)90058-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Position-Dependent Edge Emission from Zinc-Cadmium Sulfide Graded HeterojunctionsJournal of Applied Physics, 1966
- The operation of graded band gap base transistors at high currentsSolid-State Electronics, 1966
- Electrical Conduction and the Photovoltaic Effect in Semiconductors with Position-Dependent Band GapsJournal of Applied Physics, 1962
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954
- Der DrifttransistorThe Science of Nature, 1953