Luminescence investigations of highly strained-layer InAs-GaAs superlattices
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21) , 1476-1478
- https://doi.org/10.1063/1.96894
Abstract
We describe photoluminescence investigations in InAs‐GaAs superlattices in the thin layer limit (10–20 Å). The data, which are compared to theoretical results obtained from band structure calculations, yield an estimate of the conduction‐band discontinuity of 550 meV at the interfaces. They also show that although the superlattice has a band gap (765 meV) close in energy to that of the corresponding bulk InxGa1−xAs alloy (800 meV), the band structures are very different. In the superlattice, electrons and light holes appear to be the important carriers, and they tend to be spatially separated, to the extent that this is meaningful in the thin layer limit.Keywords
This publication has 8 references indexed in Scilit:
- Growth of a novel InAs-GaAs strained layer superlattice on InPApplied Physics Letters, 1985
- (InAs)m(GaAs)n superlattices grown by molecular beam epitaxyJournal of Crystal Growth, 1985
- Amorphous-Crystalline Transformation of SnTe Thin FilmsJapanese Journal of Applied Physics, 1984
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- Determination of the InAs–GaAs(100) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)Journal of Vacuum Science and Technology, 1982
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974