Band parameters for zinc telluride from bound exciton and donor-acceptor pair excitation luminescence
- 14 September 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (17) , 3641-3650
- https://doi.org/10.1088/0022-3719/11/17/016
Abstract
The valence band parameters for zinc telluride are obtained by fitting shallow impurity excited states with effective mass theory. To obtain a satisfactory fit it is necessary to assume that two-hole bound exciton transitions to excited acceptor states with predominantly d-character are very weak. They conclude that the valence band parameters mu , gamma and delta are respectively 0.58, 3.8 and approximately 0.12. The static dielectric constant is close to 9.2 and the effective mass binding energies of donors, acceptors and free excitons are respectively 18.4 meV, 62.5 meV and 13.3 meV neglecting special polaron coupling effects expected for the acceptor ground state.Keywords
This publication has 10 references indexed in Scilit:
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978
- Magnetoreflectance of the Γ6 — Γ8 exciton in ZnTeSolid State Communications, 1977
- Excited states of excitons bound to nitrogen pairs in GaPPhysical Review B, 1977
- Inversion asymmetry contribution to shallow acceptor states in InSbSolid State Communications, 1976
- Approximations for the bound-polaron problemPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Polaron Bound in a Coulomb PotentialPhysical Review B, 1972
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Induced infrared absorption due to bound polaron in the silver halidesSolid State Communications, 1970
- Hot electron magnetophonon effect in n-type epitaxial films of GaAsSolid State Communications, 1968