Flash-lamp annealing of ion-implanted silicon and its application to solar cells

1 June 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (6) , 166-168
https://doi.org/10.1109/edl.1983.25692

Abstract

Xe-lamps were used to anneal p+-implanted silicon. The redistribution of implanted dopants does not occur by flash annealing. The substrate-orientation dependence of electrical activity of implanted dopants between

Keywords

ANNEALING
SILICON
PHOTOVOLTAIC CELLS
LAMPS
PHYSICS
ELECTRON DEVICES
ION IMPLANTATION
DESIGN OPTIMIZATION
CONFERENCES

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