Laser damage to copper-doped and undoped silicon solar cells
- 11 June 1974
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 7 (9) , 1259-1269
- https://doi.org/10.1088/0022-3727/7/9/312
Abstract
An experimental study has been made of the damage to Cu-doped and undoped silicon solar cells caused by a Q-switched ruby laser (6943 nm). The pulses, of 60 MW cm−2 power density, produce surface damage and a degradation in the photocurrent of the cells. The surface damage of the undoped cells consists of a melting zone and crack lines. For the Cu-doped cells, however, a characteristic damage pattern consisting of short straight lines parallel to [110] and [112] directions is observed. The degradation rate of the spectral photocurrent of the Cu-doped cells is smaller than that of the undoped cells; and the modified damage constant of the Cu-doped cells is smaller by a factor of 2-3 than that of the undoped cells.Keywords
This publication has 22 references indexed in Scilit:
- Role of Surface Treatment in Laser Damage of GermaniumJournal of Applied Physics, 1971
- Atomically Clean Surfaces by Pulsed Laser BombardmentJournal of Applied Physics, 1969
- Electron microscope observation of laser damage on germaniumRadiation Effects, 1969
- Recombination Lifetimes in Gamma-Irradiated SiliconJournal of Applied Physics, 1968
- Localized Damage of Metal Crystals by Laser IrradiationNature, 1968
- Laser Damage on Semiconductor SurfacesJournal of Applied Physics, 1967
- Semiconductor Surface Damage Produced by Ruby LasersJournal of Applied Physics, 1965
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Spectral Response of Solar CellsJournal of Applied Physics, 1961
- On a new mode of deformation in indium antimonidePhilosophical Magazine, 1959