Area selective chemical vapor deposition of boron carbide achieved by molecular masking

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Abstract
The difference in adsorption behavior of hydrocarbons on molybdenum and titanium was used to attain area selective deposition of boron carbide to titanium substrate areas. Hydrocarbons, added to the reaction gas mixture, caused a considerable decrease in the nucleation rate on molybdenum but not on titanium. Hence conditions for selective deposition to titanium areas were obtained. The selectivity was improved by increasing the hydrocarbon concentration in the vapor or by substituting ethylene for methane. This demonstrates that molecular masking of substrate areas can be used to induce or improve the selectivity in a chemical vapor deposition process even at high temperatures (1400 K).

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