Temperature dependence of galvanomagnetic properties for Er-doped and undoped n-type InSe

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Abstract
The magnetoresistance and the Hall‐effect measurements in undoped n‐InSe (InSe) and Er‐doped InSe (InSe:Er) samples in the temperature range 10–340 K were carried out. The InSe sample and the InSe:Er sample exhibit a null transverse magnetoresistance effect for T≳160 and T≳140 K, respectively, and a zero longitudinal magnetoresistance effect for T≳160 and T≳100 K, respectively. As the temperature increases, the carrier concentration obtained from the Hall‐effect measurements in the InSe sample increases up to 40 K, decreases in the range 40–100 K, and increases for T≳100 K, although the carrier concentration in the InSe:Er sample increases up to 300 K. In the same samples, the Hall mobility of the InSe sample increases up to 80 K and obeys to μH∝T−1.86 for T≳80 K, although the Hall mobility of the InSe:Er sample decreases up to 340 K and obeys to μH∝T−1.51 for T≳80 K. The electrical conductivity, which is proportional to a product of the Hall mobility and the carrier concentration, of the InSe sample and the InSe:Er sample decreases with increasing temperature for T≳60 and T≳100 K, respectively.