Microscopic location of electron traps induced by arsenic implantation in silicon dioxide

Publisher Website
Google Scholar
Abstract
The microscopic location of implanted arsenic (As) atoms in a silicon dioxide (SiO2) matrix was studied using the avalanche injection technique. For samples annealed in nitrogen (N2), two trapping centers were observed with capture cross sections of (2–3)×10−16 cm2 and (1.5–2)×10−15 cm2. This is consistent with earlier results. Since silicon (Si) implantation reduces the density of these traps, we have concluded that they are due to As located substitutionally for Si in the SiO2 rather than in oxygen (O) sites suggested by earlier workers. The dominant trap for the samples annealed in an O2 ambient has a capture cross section of 1×10−15 cm2. It is suggested that this trap is due to an As-O complex formed through a reaction of O with interstitial As.