Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE Method
- 1 April 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (4) , 949-952
- https://doi.org/10.1149/1.2129793
Abstract
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