Chemical Vapor Deposition of Boron Nitride

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Abstract
Thermodynamics and kinetics of boron nitride deposition from gas mixtures were studied in the temperature range 850 to 1050°C at pressures between 1.1 and 3.5 Torr. A wide range of deposition rates, as high as 1 μm/min, were measured. The rate of depositon was controlled by an interface reaction with an activation energy of . The deposition rate constant essentially was independent of the partial pressure of and showed a close to first‐order dependence on the partial pressure of . The rate‐limiting step of the interface reaction may be the dissociative adsorption of onto the substrate surface. The deposited BN was of theoretical density, turbostratic structure, and contained about 12 atomic percent oxygen.

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