Observation of relaxation resonance effects in the field spectrum of semiconductor lasers

1 February 1983

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 42 (3) , 211-213
https://doi.org/10.1063/1.93894

Abstract

Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurements of their power dependence show they are linked to the relaxation resonance. We attribute these maxima to combined phase and amplitude fluctuations at the relaxation resonance. A theoretical calculation of the field spectrum using the results of a noise analysisincorporating carrier dynamics agrees very well with observations.

Keywords

SEMICONDUCTOR LASERS
SPECTRA
RELAXATION
RESONANCE
MATHEMATICAL MODELS
OSCILLATION MODES
POWER
CONTROL
THEORETICAL DATA
NOISE
CHARGE CARRIERS
DYNAMICS

This publication has 1 reference indexed in Scilit:

Acoustooptic modulation resonances of injection lasers
IEEE Journal of Quantum Electronics, 1982