Theory of activated conduction in a Si single-electron transistor
- 30 June 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 47 (1-4) , 205-207
- https://doi.org/10.1016/s0167-9317(99)00197-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Coulomb blockade of activated conductionPhysical Review B, 1996
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995