Stabilization of MOS structures by Boron ion implantation
- 1 January 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 63 (11) , 1619-1620
- https://doi.org/10.1109/PROC.1975.10016
Abstract
Bias and temperature stress measurements have been used to study the effect of11B ion implantation into MOS structures. The boron energies were selected so that the projected range of the implanted distribution was approximately equal to the device oxide thickness. Boron ion doses ranged from 1011to 2 × 1012/cm2. The bias temperature stress consisted of 106V/cm applied at 300°C for 5 min. In all cases, the stability of the implanted capacitors was found to be significantly improved over the unimplanted.Keywords
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