A Low-Loss Microstrip X-Band Diode Phase Shifter

Abstract
An X-band four-bit phase shifter capable of handling 440 watts peak power with an average transmission loss less than 1.7 dB has been constructed on a single sapphire substrate, with 8 PIN diodes as the only discrete componenets. This insertion loss is the lowest which has been acknowledged at this time for a comparable diode device. The unit has an RMS phase error less than 6.4° over a 7% band.

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