Transmission Electron Diffraction Pattern of Electron-Irradiation-Induced {113}-Faulted Loops in Si
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1698
- https://doi.org/10.1143/jjap.29.l1698
Abstract
Transmission electron diffraction patterns from {113}-faulted loops in Si, which are introduced by electron irradiation in a high-voltage electron microscope, have been observed for the first time. The diffraction patterns were observed after removing the perfect crystal of Si by ion-thinning. The patterns were taken under the plan-view condition. The patterns were consistently interpreted by assuming a 1×1 unit cell on a {113} plane.Keywords
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