Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 6 9, 7901 (1991)]
- 1 October 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (7) , 4009
- https://doi.org/10.1063/1.349174
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Misfit dislocations and critical thickness of heteroepitaxyJournal of Applied Physics, 1991
- Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °CJournal of Applied Physics, 1991