Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (6) , 972-981
- https://doi.org/10.1109/3.108092
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Small astigmatism, high power and low noise 0.78 µm self-aligned lasersElectronics Letters, 1989
- Two-dimensional simulation of laser diodes in the steady stateIEEE Journal of Quantum Electronics, 1988
- High-power single longitudinal mode operation of inverted channel substrate planar lasersJournal of Applied Physics, 1985
- Complementary self-aligned laser by metalorganic chemical vapour depositionElectronics Letters, 1985
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Principles of semiconductor laser modellingIEE Proceedings J Optoelectronics, 1985
- Numerical analysis of heterostructure semiconductor devicesIEEE Transactions on Electron Devices, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Channeled substrate nonplanar laser analysis - Part I: Formulation and the plano-convex waveguide laserIEEE Journal of Quantum Electronics, 1981
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952