Phonons as a probe of short-range order inalloys
- 15 January 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (3) , 1302-1309
- https://doi.org/10.1103/physrevb.53.1302
Abstract
This paper shows that by combining theoretical and experimental results for local Si-C phonon modes in dilute alloys, information concerning the short-range order can be obtained. Calculations using an anharmonic Keating model predict satellite peaks near the vibrational frequency of an isolated C impurity which are associated with second-, third-, etc., nearest-neighbor C-C pairs. By comparing theoretical spectra with those obtained by Raman and infrared absorption spectroscopy, we conclude that the probability for a third-nearest-neighbor coordination of the C atoms is considerably above that for a purely random alloy. This confirms earlier work predicting an attractive third-nearest-neighbor interaction of the C impurities due to elastic interactions. © 1996 The American Physical Society.
This publication has 15 references indexed in Scilit:
- Anharmonic Keating model for group-IV semiconductors with application to the lattice dynamics in alloys of Si, Ge, and CPhysical Review B, 1995
- Raman spectroscopy study of microscopic strain in epitaxial Si1−x−yGexCy alloysApplied Physics Letters, 1995
- Precipitation and relaxation in strained Si1−yCy/Si heterostructuresJournal of Applied Physics, 1994
- Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbonApplied Physics Letters, 1994
- Lattice distortion in a strain-compensated layer on siliconPhysical Review B, 1994
- Strain-stabilized highly concentrated pseudomorphiclayers in SiPhysical Review Letters, 1994
- Si1-x-yGexCy growth and properties of the ternary systemJournal of Crystal Growth, 1993
- Raman spectroscopy of CySi1−y alloys grown by molecular beam epitaxyApplied Physics Letters, 1992
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Carbon defects and defect reactions in siliconPhysical Review Letters, 1990