The physics of hot-electron degradation of Si MOSFET's: Can we understand it?
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 578-596
- https://doi.org/10.1016/0169-4332(89)90473-x
Abstract
No abstract availableKeywords
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