On-state breakdown in power HEMTs: measurements and modeling

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23 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1997.650446

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Ti-gate metal induced PHEMT degradation in hydrogen
IEEE Electron Device Letters, 1997
High-efficiency GaAs-based pHEMT C-band power amplifier
IEEE Microwave and Guided Wave Letters, 1996
Off-state breakdown in InAlAs/InGaAs MODFET's
IEEE Transactions on Electron Devices, 1995
Impact ionization in InAlAs/InGaAs HFET's
IEEE Electron Device Letters, 1994
Principles of Large-Signal MESFET Operation
IEEE Transactions on Microwave Theory and Techniques, 1994