High-temperature GaN/SiC heterojunction bipolar transistor with high gain
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 389-392
- https://doi.org/10.1109/iedm.1994.383385
Abstract
A new high temperature heterojunction bipolar transistor (HBT) with a current gain as high as 100,000 has been fabricated. This HBT utilizes GaN for the emitter and SiC for the base and collector. The devices exhibit near ideal current-voltage characteristics, as demonstrated by their high current gain along with the absence of any observable Early effect, with the exception of high leakage currents at voltages above 10 V. High temperature operation has been demonstrated up to 260/spl deg/C with minimal degradation in output, except for an increase in leakage currents.<>Keywords
This publication has 7 references indexed in Scilit:
- Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged speciesJournal of Applied Physics, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991