Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II–VI semiconductors
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 67-74
- https://doi.org/10.1016/0022-0248(92)90718-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 19 references indexed in Scilit:
- Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI SemiconductorsJapanese Journal of Applied Physics, 1991
- Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSeJapanese Journal of Applied Physics, 1991
- Surface photochemical reactions for alkyl group elimination from precursors in OMVPEJournal of Crystal Growth, 1991
- OMVPE growth of ZnSe and ZnSxSe1-x using methylselenol as a selenium sourceJournal of Crystal Growth, 1990
- MOVPE of narrow and wide gap II–VI compoundsJournal of Crystal Growth, 1990
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as ReactantsJapanese Journal of Applied Physics, 1990
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPEJapanese Journal of Applied Physics, 1989
- Gas-Phase and Surface Reactions in Xenon Lamp-Assisted Organometallic Vapor-Phase Epitaxy of ZnSeJapanese Journal of Applied Physics, 1988
- Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSeJapanese Journal of Applied Physics, 1987
- Low resistivity Al-doped ZnS grown by MOVPEJournal of Crystal Growth, 1986