Phase Shift Corrections for Infrared Interference Measurement of Epitaxial Layer Thickness

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Abstract
Under certain conditions of wavelength and substrate impurity level, correction factors were found to be necessary for the infrared interference method of measuring epitaxial layer thickness. A general theory has been developed which relates the index of refraction and extinction coefficient to physical properties of the semiconductor and the wavelength. From these constants, a phase change at the epitaxial layer‐substrate interface is calculated. This phase shift is shown to influence the measurement and a correction factor is derived.

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