A Multiresponse Factorial Study of Reactor Parameters in Plasma‐Enhanced CVD Growth of Amorphous Silicon Nitride

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Abstract
A 24 factorial design in the growth parameters has been implemented for plasma‐enhanced CVD deposition of thin films. A variety of chemical and physical properties were used as responses to measure the strength of interactions between and among the factors studied. Statistically significant interactions of the primary factors (i.e., reactant gas ratio, pressure, temperature, and RF power) were found for almost all responses measured. ratio and RF power were found to have the most and largest effects on all responses. Changes in these variables resulted in changes in the film stoichiometry which have far reaching implications for the refractive index and buffered etch rate of these films. In each response, the trends observed support conclusions of previous single‐variable experiments. The current experiments extend those studies by quantitating the various factor‐factor interactions.

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