Highly linear GaAs hall devices fabricated by ion implantation
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (1) , 78-82
- https://doi.org/10.1109/t-ed.1982.20661
Abstract
Gallium arsenide Hall devices have been fabricated with very thin active layers formed by silicon implantation. The variation of Hall voltage with calibrated magnetic-flux density shows that the linearity error is better than ±0.03 percent in the magnetic-flux-density range below 10 kG at room temperature. Measurements in a superconducting magnet at 4.2 K shows that the linearity error is within ± 0.6 percent at the range below 68 kG. When this device is used as a magnetic sensor, magnetic-flux meters with an accuracy of 0.1 percent (B< 10 kG) at room temperature and 0.6 percent (B< 68 kG) at 4.2 K can be achieved.Keywords
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