Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7R) , 1337-1342
- https://doi.org/10.1143/jjap.30.1337
Abstract
Analysis of the reflection high-energy electron diffraction (RHEED) patterns from the vicinal Si(111) surfaces misoriented to [112̄] shows that step bunching takes place on the surface, and the surface breaks up into (111) and (331) facets. A previously unreported superstructure is found on the (331) facet. From the temperature dependence of the diffraction spot positions, this superstructure and the 7×7 structure on the (111) facet are shown to cause the reconstruction-induced faceting.Keywords
This publication has 14 references indexed in Scilit:
- Thermal Desorption from Si(111) Surfaces with Native Oxides Formed During Chemical TreatmentsJapanese Journal of Applied Physics, 1990
- Step-height-tripling transition on vicinal Si(111)Physical Review B, 1990
- Surface faceting and the equilibrium crystal shapeUltramicroscopy, 1989
- Spontaneous Formation of Stress Domains on Crystal SurfacesPhysical Review Letters, 1988
- Temperature dependence of vicinal Si(111) surfacesPhysical Review B, 1988
- Surface phase separation of vicinal Si(111)Physical Review Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- 7×7 Reconstruction of Ge(111) Surfaces under Compressive StrainPhysical Review Letters, 1985
- LEED studies of clean high Miller index surfaces of siliconSurface Science, 1981
- Leed studies of vicinal surfaces of siliconSurface Science, 1979