Electrical characteristics of a reduced-area, rhodium-plated, silicon end contact
- 31 July 1961
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 3 (1) , 1-IN2
- https://doi.org/10.1016/0038-1101(61)90073-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958
- Minority Carrier Extraction in GermaniumPhysical Review B, 1955
- Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1954
- Theory of the Thermoelectric Power of SemiconductorsPhysical Review B, 1954