Planar vibrational modes as probes of interface structure
- 15 July 1994
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (3) , 1695-1700
- https://doi.org/10.1103/physrevb.50.1695
Abstract
Raman-scattering studies are reported for a vibrational mode with an eigenvector localized at planes of interface atoms of heterojunctions. These planar vibrational modes (PVM’s) are studied in a variety of structures formed in the III-V 6.1-Å semiconductor materials family of GaSb, InAs, and AlSb with interface planes involving GaAs or AlAs bonds. The results of these measurements are compared with calculations of the eigenvectors and eigenenergies of the PVM’s and are related to a simple one-dimensional model that describes the segregation of atoms during growth.Keywords
This publication has 24 references indexed in Scilit:
- Resonance effects in Raman scattering from InAs/AlSb quantum wellsApplied Physics Letters, 1994
- Molecular-beam-epitaxial growth and optical analysis of InAs/AlSb strained-layer superlatticesJournal of Applied Physics, 1993
- Planar vibrational modes in superlatticesPhysical Review B, 1993
- Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structureApplied Physics Letters, 1993
- Effect of interfacial bond type on the electronic and structural properties of GaSb/InAs superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices: An optical studyApplied Physics Letters, 1993
- Electronic band structure of far-infrared Ga1-xInxSb/InAs superlatticesSemiconductor Science and Technology, 1993
- Effect of interface composition on the band offsets at InAs/AlSb (001) heterojunctionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Band-offset transitivity in strained (001) heterointerfacesPhysical Review B, 1992
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interfaceJournal of Applied Physics, 1990