Molecular beam epitaxy of monotype CrSi2 on Si(111)
- 1 March 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 209 (3) , L139-L143
- https://doi.org/10.1016/0039-6028(89)90072-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Molecular-beam epitaxy of CrSi2 on Si(111)Journal of Vacuum Science & Technology B, 1988
- Epitaxial growth of CrSi and CrSi2 on Si(1 1 1)Solid State Communications, 1988
- Room-temperature formation and oxidation properties of the Cr/Si(111) interfaceJournal of Vacuum Science & Technology A, 1987
- Formation of CrSi andupon annealing of Cr overlayers on Si(111)Physical Review B, 1987
- Temperature dependence of semiconducting and structural properties of Cr-Si thin filmsJournal of Applied Physics, 1985
- Epitaxial growth of CrSi2 on (111)SiApplied Physics Letters, 1984
- Electronic structure of Cr silicides and Si-Cr interface reactionsPhysical Review B, 1983
- Structural morphology and electronic properties of the Si-Cr interfacePhysical Review B, 1982