Mixed-interstitial recovery in AlTi and AlAg dilute alloys

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Abstract
AlTi and AlAg dilute alloys were electron-irradiated at temperature ranging from approximately=10 K to approximately=100 K, that is below and above stage I. The annealing of the defects was studied through electrical resistivity measurements. In both alloys, mixed interstitials are formed either during state IE recovery at around 45 K or during irradiation itself if the temperature is 50 K or higher. A study of the stage II recovery (70-180 K) shows that the Al-Ti mixed interstitials are unstable above 130 K. Al-Ag mixed interstitials are found to be stable up to at least 180 K, in contrast to recent reports in the literature. In both alloys, the trapped di-interstitials recover during stage II, around 100 K for AlTi and around 130 K for AlAg.