Damage produced by ion mplantation in silicon
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (1) , 33-43
- https://doi.org/10.1080/00337577008235043
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGIONApplied Physics Letters, 1969
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- Some comments on the interpretation of the ‘kikuchi-like reflection patterns’ observed by scanning electron microscopyPhilosophical Magazine, 1967
- Kikuchi-like reflection patterns obtained with the scanning electron microscopePhilosophical Magazine, 1967
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967