Laser cleaning of semiconductor surface

Publisher Website
Google Scholar
Abstract
The update technology of integrated circuits (IC) imposes rigorous requirements on semiconductor substrates whose bulk and subsurface crystalline structures must be perfect. Of principal role here is the purity of the substrate surface. By the estimates, when producing very low size integration (VLSI) IC ( <105) , the output of acceptable pro-Vducts is as low as 5%. Half of the wastage is known to be due to contamination of the semiconductor wafer surfaces. It follws from the gained expirience that the majordifficulties of superhigh purificati— on are associated with removal of metal ions and submicron--size parti-'des from the semiconductor surface. A search of new purification tech— niques should concentrate on combating, first of ally these impurities. It is very desirable that purification run during technological proces— ses i.e. during the wafer washing, not considerably infringing the major technological course. The solution of the problem stimulates complex investigations of metal ions and dust particles of the sorptiondesorption processes in a heterogeneous semiconductor—liquid system. Let us consider some examples of laser action which may be used for semiconductor surface cleaning.

This publication has 0 references indexed in Scilit: