Transient processes in AlGaN/GaN heterostructurefield effect transistors
- 13 April 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (8) , 757-759
- https://doi.org/10.1049/el:20000573
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- AlGaN/GaN metal oxide semiconductor heterostructure field effect transistorIEEE Electron Device Letters, 2000
- Trap effects studies in GaN MESFETs by pulsed measurementsElectronics Letters, 1999
- 1/f noise sourcesIEEE Transactions on Electron Devices, 1994