Selective Deposition of Silicon by Mercury Sensitized Photochemical Vapor Deposition

1 June 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (6S) , 3106-3108
https://doi.org/10.1143/jjap.32.3106

Abstract

The authors have developed a low-temperature process for selective deposition of silicon by mercury sensitized photochemical vapor deposition (Photo-CVD) without using ultraclean technology. It was found that hydrogen radical pretreatment was required to obtain selective deposition. There was an incubation period for not only SiO₂ surface but also Si surface. It was confirmed that mercury sensitized Photo-CVD is a promising method for selective deposition process at low temperature using large-area glass substrate.

Keywords

MERCURY SENSITIZED
SENSITIZED PHOTOCHEMICAL
PHOTO CVD
PHOTOCHEMICAL VAPOR
PROCESS AT LOW TEMPERATURE
PROCESS FOR SELECTIVE DEPOSITION

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