Solution Regrowth of Planar InSb Laser Structures

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Abstract
A new technique has been developed for growing a thin layer of on an substrate from a saturated melt. This type of growth from a solution has been used previously in the fabrication of and Ge p‐n junctions; however, at the lower temperatures required for (about 300°C) certain modifications were made, such as the use of hot liquid stearic acid which covers the substrate and the melt during the growth process. By doping the melt suitably, uniform planar n+‐p junctions were grown on substrate areas of about 2 cm2. Such junctions have been used in large‐volume injection lasers which emit coherent light in a direction normal to the junction plane.

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