In Situ Monitoring of Liquid Phase Electroepitaxial Growth

Abstract
In situ monitoring of the layer thickness during liquid phase electroepitaxy (LPEE) was achieved with a submicron resolution through precise resistance measurements. The new approach to the study and control of LPEE was applied to growth of undoped and Ge‐doped layers. The in situ determined growth kinetics was found to be in excellent agreement with theory.

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