A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 112-115
- https://doi.org/10.1016/0168-583x(87)90807-x
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978