The interaction of Ag, In and Al overlayers with InP (110): surface and diode studies of the effect of indium interlayers
- 1 April 1986
- Vol. 36 (4) , 217-221
- https://doi.org/10.1016/0042-207x(86)90003-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The Kelvin probe method for work function topographies: technical problems and solutionsVacuum, 1984
- Noble metal interactions with the InP(110) surfaceJournal of Vacuum Science & Technology A, 1984
- Formation de l'interface métal/InP et de diodes Schottky sur InPRevue de Physique Appliquée, 1984
- Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfacesSurface Science, 1983
- Surface defects on semiconductorsSurface Science, 1983
- Study of the GaAs–Au and Si–SiO2 interface formation by the Kelvin methodJournal of Vacuum Science & Technology B, 1983
- Fermi-level pinning and chemical structure of InP–metal interfacesJournal of Vacuum Science and Technology, 1982
- Energy levels of semiconductor surface vacanciesJournal of Vacuum Science and Technology, 1980
- Charge transfer to oxygen chemisorbed on cleaved GaAs(110) surfacesJournal of Vacuum Science and Technology, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979