Determination of the denuded zone in Czochralski-grown silicon wafers through MOS lifetime profiling

1 December 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (12) , 2830-2838
https://doi.org/10.1109/t-ed.1985.22423

Abstract

A technique is presented that can determine whether a denuded zone exists in Czochralski-grown silicon wafers and, if so, how deep into the substrate it extends. Measurements taken after oxygen out-diffusion and precipitation anneals show agreement with denuded zone measurements taken using section topography and angle lapping/ chemical etching. The defect mechanisms that are being monitored by this technique include enhanced thermal generation due to defect states. They also include increased electron-hole pair generation due to impact ionization, which is caused by distortion of the potential lines near precipitates (oxide and/or metal precipitaties). Another defect mechanism, injection of unannihilated thermal donors, is shown to be less significant.

Keywords

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