Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)
- 16 January 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (4) , 460-462
- https://doi.org/10.1063/1.1338497
Abstract
Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in homoepitaxy on under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown monolayer may take a much longer time to complete than the recrystallization of the monolayer. The oxidation reaction was found to be characterized by an effective activation energy barrier of 1.35 eV and a large preexponential factor.
Keywords
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