GeTe thin films: Amorphous and crystalline characteristics

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Abstract
GeTe thin films were prepared by rf diode and magnetron sputtering techniques. Thicknesses from 0.5 to 7 μm were produced. Electron microprobe analysis indicated that the obtained composition of the films produced by the two different systems was Ge51.9Te48.1. As-deposited films were amorphous when deposition was onto a room temperature substrate during sputtering, the electrical conductivity of the amorphous films was increased by several orders of magnitude after crystallization. The amorphous crystalline transformation occurred at 230 °C over a narrow temperature interval of less than 20 °C. This transition was confirmed by measurements of Seebeck coefficient, and electrical conductivity versus temperature. Crystalline films were obtained by (i) furnace annealing, (ii) sputtering at substrate temperature beyond 250 °C, and (iii) laser annealing. The crystalline films had the rhombohedral structure and nonpreferred orientation. Crystalline films obtained by the three different annealing methods exhibited similar properties.
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