Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001)
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 475-481
- https://doi.org/10.1007/bf02657950
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Structure of CdTe(111)B grown by MBE on misoriented Si(001)Journal of Electronic Materials, 1993
- A TEM evaluation of CdTe epilayers grown on precisely oriented (
- Reduced metal–insulator semiconductor tunneling in metalorganic chemical vapor deposition HgCdTe(111)Te filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Defect Formation during MBE Growth of CdTe (111)Physica Status Solidi (a), 1991
- Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986