Liquid-phase epitaxial growth of Ga1−xAlxAs on the side and top surfaces of air-exposed Ga1−yAlyAs
- 15 June 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (12) , 697-699
- https://doi.org/10.1063/1.88640
Abstract
The LPE growth of Ga1−xAlxAs on the mesa‐etched and air‐exposed surfaces of Ga1−yAlyAs is described. The LPE is shown to begin and proceed at the intersection of the vertical plane (mesa‐etched side) and the horizontal plane (surface of the epitaxial layer). The melt‐back process has also been observed to proceed fast at an intersection such as this. The LPE technique combined with the mesa etching is shown to be effective in obtaining the growth on the top surface of Ga1−yAlyAs provided the aluminum fraction y is relatively small (y≲0.2). This process should prove useful in the fabrication of DFB lasers, as well as optical components such as GaAlAs waveguides and couplers.Keywords
This publication has 4 references indexed in Scilit:
- GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinementApplied Physics Letters, 1975
- Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedbackApplied Physics Letters, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971