Effect of Impurity Scattering on the Figure of Merit of Thermoelectric Materials
- 1 December 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (12) , 1922-1924
- https://doi.org/10.1063/1.1735090
Abstract
The thermoelectric figure of merit z=α2/ρκ is calculated for an extrinsic semiconductor with mixed acoustic‐mode lattice scattering and ionized‐impurity scattering. The result is compared to the value for pure acoustic‐mode scattering. As the amount of ionized‐impurity scattering is increased, the figure of merit increases by less than 10% and then falls slowly.This publication has 5 references indexed in Scilit:
- On the Theory of the Peltier Heat PumpJournal of Applied Physics, 1959
- The Galvanomagnetic and Thermomagnetic Effects in SemiconductorsProceedings of the Physical Society. Section B, 1957
- Impurity Scattering in SemiconductorsProceedings of the Physical Society. Section B, 1956
- Theory of Thermoelectric Power in Semiconductors with Applications to GermaniumPhysical Review B, 1953
- The Combination of Resistivities in SemiconductorsPhysical Review B, 1951